Infineon Technologies AG Transistors BFP410H6327

Description
4.5V 150mW 95@13mA,2V 40mA NPN SOT-343-4 Bipolar (BJT) ROHS
Description
4.5V 150mW 95@13mA,2V 40mA NPN SOT-343-4 Bipolar (BJT) ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - BFP410H6327 - ODG (Origin Data Global)
Shenzhen, China
Transistors
BFP410H6327
Transistors BFP410H6327
4.5V 150mW 95@13mA,2V 40mA NPN SOT-343-4 Bipolar (BJT) ROHS

4.5V 150mW 95@13mA,2V 40mA NPN SOT-343-4 Bipolar (BJT) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number BFP410H6327
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

 - 2ED21834S06JXUMA1 - Rochester Electronics
Infineon Technologies AG
Specs
Transistor Type MOSFET; IGBT
Package Type PG-DSO-14
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1627-T-AZ - 855053-2SA1627-T-AZ - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-02 - Qorvo
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
4 suppliers