Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC3596E 2SC3596E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 855165-2SC3596E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0075
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 855165-2SC3596E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0075
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Datasheet
Datasheet Summary
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The 2SC3596E is an NPN silicon transistor from the 2SA1402/2SC3596 complementary pair series, designed for ultrahigh-definition CRT video output and color TV chroma applications. It is packaged in a TO-126 case with dimensions of 8.0 mm in length, 4.0 mm in width, and 5.1 mm in height. The device has a collector-to-emitter voltage rating of 60 V, a collector current rating of 300 mA, and a collector dissipation of 8 W at Tc=25°C. The gain-bandwidth product is 700 MHz, with a reverse transfer capacitance of 1.8 pF at VCB=−30 V and f=1 MHz. The hFE is classified as range E (100 to 200) for IC=−50 mA. Junction temperature is rated to 150°C, and storage temperature ranges from −55°C to +150°C.

Datasheet Summary
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The 2SC3596E is an NPN silicon transistor from the 2SA1402/2SC3596 complementary pair series, designed for ultrahigh-definition CRT video output and color TV chroma applications. It is packaged in a TO-126 case with dimensions of 8.0 mm in length, 4.0 mm in width, and 5.1 mm in height. The device has a collector-to-emitter voltage rating of 60 V, a collector current rating of 300 mA, and a collector dissipation of 8 W at Tc=25°C. The gain-bandwidth product is 700 MHz, with a reverse transfer capacitance of 1.8 pF at VCB=−30 V and f=1 MHz. The hFE is classified as range E (100 to 200) for IC=−50 mA. Junction temperature is rated to 150°C, and storage temperature ranges from −55°C to +150°C.

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TRANSISTORS - Transistors (BJT) - Single - 2SC3596E - 855165-2SC3596E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC3596E
855165-2SC3596E
TRANSISTORS - Transistors (BJT) - Single - 2SC3596E 855165-2SC3596E
Manufacturer: ON Semiconductor Win Source Part Number: 855165-2SC3596E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0075

Manufacturer: ON Semiconductor
Win Source Part Number: 855165-2SC3596E
Series: *
Features: Bipolar (BJT) Transistor
Package: Bulk
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.29.0075

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 855165-2SC3596E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC3596E
Package Type SOT3
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