Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 196T E6327

PNP silicon digital transistor with built-in bias resistors (R1 = 47 kΩ, R2 = 22 kΩ) for switching, inverter, and driver circuits, available in SC75 package. Rated for a collector-emitter voltage of 50 V, collector current of 70 mA, and total power dissipation of 250 mW at junction temperatures up to 109 °C. Junction and storage temperatures are rated to 150 °C. Transition frequency is 150 MHz, and collector-emitter saturation voltage is maximum 0.3 V at I_C = 10 mA and I_B = 0.5 mA. The device meets the thermal and electrical specifications defined for the BCR196T variant.