Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 151T E6327

BCR151T is a PNP silicon digital transistor with built-in bias resistors (R1 = R2 = 100 kΩ) intended for switching, inverter, and driver circuits. It is packaged in SC75 surface-mount case and operates with a maximum collector-emitter voltage of 50 V and collector current of 50 mA. Total power dissipation is rated at 250 mW at junction temperatures up to 109 °C. The device has a transition frequency of 120 MHz and collector-emitter saturation voltage of ≤0.3 V at I_C = 5 mA and I_B = 0.25 mA. Junction temperature rating is 150 °C. Thermal resistance from junction to soldering point is ≤165 K/W. The part meets RoHS compliance and is certified for automotive applications under AEC-Q200. The device is available in reels of 3,000 or 10,000 pieces.