Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 133T E6327

NPN silicon digital transistor with built-in bias resistors (10 kΩ each) for switching, inverter, interface, and driver circuits, housed in the SC75 package. It has a collector-emitter voltage rating of 50 V, collector current of 100 mA, and total power dissipation of 250 mW at junction temperature ≤109°C. The junction temperature limit is 150°C, with thermal resistance from junction to soldering point ≤165 K/W. Transition frequency is 130 MHz, and collector-emitter saturation voltage is ≤0.3 V at 10 mA collector current and 0.5 mA base current. Input resistor is 7-13 kΩ. The device is RoHS compliant and meets the thermal and electrical specifications for the BCR133T variant in the series.