Qorvo's UJ4C075060K3S is a 750 V, 58 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
N-Channel 750V 28A (Tc) 155W (Tc) Through Hole TO-247-3
Manufacturer: Qorvo
Category: Discrete Semiconductor -Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss): 750 V
Power Dissipation (Max): 155W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
SICFET N-CH 750V 28A TO247-3
Qorvo | DigiKey | Win Source Electronics | Acme Chip Technology Co., Limited | |
---|---|---|---|---|
Product Category | RF Transistors | Transistors | Transistors | RF Transistors |
Product Number | UJ4C075060K3S | 2312-UJ4C075060K3S-ND | UJ4C075060K3S | |
Product Name | 750 V, 58 mohm SiC FET | Single FETs, MOSFETs | Discrete Semiconductor -Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
Transistor Technology / Material | 750 V, 58 mohm SiC FET |