- Trained on our vast library of engineering resources.

Qorvo 750 V, 58 mohm SiC FET UJ4C075060K3S

Description
Qorvo's UJ4C075060K3S is a 750 V, 58 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
750 V, 58 mohm SiC FET - UJ4C075060K3S - Qorvo
Greensboro, NC, United States
750 V, 58 mohm SiC FET
UJ4C075060K3S
750 V, 58 mohm SiC FET UJ4C075060K3S
Qorvo's UJ4C075060K3S is a 750 V, 58 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Qorvo's UJ4C075060K3S is a 750 V, 58 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Supplier's Site Datasheet
Single FETs, MOSFETs - 2312-UJ4C075060K3S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UJ4C075060K3S-ND
Single FETs, MOSFETs 2312-UJ4C075060K3S-ND
N-Channel 750V 28A (Tc) 155W (Tc) Through Hole TO-247-3

N-Channel 750V 28A (Tc) 155W (Tc) Through Hole TO-247-3

Supplier's Site Datasheet
Discrete Semiconductor -Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs -  - Win Source Electronics
Yishun, Singapore
Discrete Semiconductor -Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Discrete Semiconductor -Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Manufacturer: Qorvo Category: Discrete Semiconductor -Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 750 V Power Dissipation (Max): 155W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole

Manufacturer: Qorvo
Category: Discrete Semiconductor -Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss): 750 V
Power Dissipation (Max): 155W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole

Supplier's Site Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UJ4C075060K3S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UJ4C075060K3S
SICFET N-CH 750V 28A TO247-3

SICFET N-CH 750V 28A TO247-3

Supplier's Site

Technical Specifications

  Qorvo DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category RF Transistors Transistors Transistors RF Transistors
Product Number UJ4C075060K3S 2312-UJ4C075060K3S-ND UJ4C075060K3S
Product Name 750 V, 58 mohm SiC FET Single FETs, MOSFETs Discrete Semiconductor -Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material 750 V, 58 mohm SiC FET
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015 - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
2 suppliers
750 V, 33 mohm SiC FET - UJ4C075033K3S - Qorvo
Specs
Transistor Technology / Material 750 V, 33 mohm SiC FET
Transistor Grade / Operating Range Military; Automotive
Package Type TO-247-3L
View Details
3 suppliers
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015L - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
2 suppliers
DC - 20 GHz, 800 um Discrete GaAs pHEMT Die - QPD2080D - Qorvo
Specs
Transistor Type PHEMT
Transistor Technology / Material DC - 20 GHz, 800 um Discrete GaAs pHEMT Die
Transistor Grade / Operating Range Military
View Details