EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8123G
The EiceDRIVER™ 2EDL8123G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters.
This industry-leading 3 A version is recommended to reduce MOSFET switching losses. The 2EDL8123G has a truly differential input structure and built-in shoot-through protection making it the perfect choice for non-diagonally driven primary-side half-bridge stages in DC-DC brick converters.
All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns.
Summary of Features
No need for external boot strap diode
Fast MOSFET switching
Strong pull-down current reduces risk of
return-on from switching noise
Low dead-time losses
Inherent shoot-through protection
-8 V/+15 V common mode rejection
Benefits
High power density
High efficiency
Strong MOSFET Reliability
High efficiency
Strong MOSFET reliability
Robust operation
Potential Applications
Telecom DC-DC converter
Datacom DC-DC converter
Two switch forward converter
Active clamp forward converter
Class D audio amplifier
Applications
Data center and AI data center solutions
Multicopters and drones
Telecommunication infrastructure
EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8123G
The EiceDRIVER™ 2EDL8123G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters.
This industry-leading 3 A version is recommended to reduce MOSFET switching losses. The 2EDL8123G has a truly differential input structure and built-in shoot-through protection making it the perfect choice for non-diagonally driven primary-side half-bridge stages in DC-DC brick converters.
All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns.
Summary of Features
- No need for external boot strap diode
- Fast MOSFET switching
- Strong pull-down current reduces risk of
- return-on from switching noise
- Low dead-time losses
- Inherent shoot-through protection
- -8 V/+15 V common mode rejection
Benefits
- High power density
- High efficiency
- Strong MOSFET Reliability
- High efficiency
- Strong MOSFET reliability
- Robust operation
Potential Applications
- Telecom DC-DC converter
- Datacom DC-DC converter
- Two switch forward converter
- Active clamp forward converter
- Class D audio amplifier
Applications
- Data center and AI data center solutions
- Multicopters and drones
- Telecommunication infrastructure
