Infineon Technologies AG Power - Gate Driver ICs - 2EDL8123G3C 2EDL8123G3C

Description
120 V high side and low side 2EDL8123G3C EiceDRIVER™ 2EDL8123G3C is a high-side and low-side driver designed for advanced switching converters such as in telecom and datacom applications. 2EDL8123G3C takes in differential input with built-in hysteresis for enhanced noise immunity. 2EDL8123G3C’s inherent shoot-through protection ensures the robustness of the system. 2EDL8123G3C have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching <6 ns that ensures volt-second balance and avoids magnetic core saturation. The driver comes in small 3x3 industry-standard leadless package and pin-out. Summary of Features Differential input for superb robustness with inherent shoot-through protection 3 A source current capability for both high side and low side drivers Strong 5 A high side / 6 A low side sink current capability On chip boot strap diode Fast switching frequency Low dead-time losses -8 V/+15 V common mode rejection Small 3 mm x 3 mm SON package Lead free RoHS compliant package Benefits High power density High efficiency Strong MOSFET reliability High efficiency Strong MOSFET reliability Robust operation Potential Applications DC-to-DC converter Isolated bus converter Synchronous rectification for SMPS Class-D audio amplifiers Applications Connected and smart lighting for IoT Home appliances Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with BSC026N08NS5 | N-Channel Power MOSFET BSC100N06LS3 G | N-Channel Power MOSFET S70FL01GSDPMFV010 | Quad SPI Flash S70FL01GSAGMFA013 | Quad SPI Flash BSC070N10NS5 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET BSC340N08NS3 G | N-Channel Power MOSFET IPB048N15N5 | N-Channel Power MOSFET IPD320N20N3 G | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET BSC100N06LS3 G | N-Channel Power MOSFET S70FL01GSDPMFV010 | Quad SPI Flash S70FL01GSAGMFA013 | Quad SPI Flash BSC070N10NS5 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET BSC340N08NS3 G | N-Channel Power MOSFET 1 2 3
Request a Quote Datasheet
Description
120 V high side and low side 2EDL8123G3C EiceDRIVER™ 2EDL8123G3C is a high-side and low-side driver designed for advanced switching converters such as in telecom and datacom applications. 2EDL8123G3C takes in differential input with built-in hysteresis for enhanced noise immunity. 2EDL8123G3C’s inherent shoot-through protection ensures the robustness of the system. 2EDL8123G3C have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching <6 ns that ensures volt-second balance and avoids magnetic core saturation. The driver comes in small 3x3 industry-standard leadless package and pin-out. Summary of Features Differential input for superb robustness with inherent shoot-through protection 3 A source current capability for both high side and low side drivers Strong 5 A high side / 6 A low side sink current capability On chip boot strap diode Fast switching frequency Low dead-time losses -8 V/+15 V common mode rejection Small 3 mm x 3 mm SON package Lead free RoHS compliant package Benefits High power density High efficiency Strong MOSFET reliability High efficiency Strong MOSFET reliability Robust operation Potential Applications DC-to-DC converter Isolated bus converter Synchronous rectification for SMPS Class-D audio amplifiers Applications Connected and smart lighting for IoT Home appliances Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with BSC026N08NS5 | N-Channel Power MOSFET BSC100N06LS3 G | N-Channel Power MOSFET S70FL01GSDPMFV010 | Quad SPI Flash S70FL01GSAGMFA013 | Quad SPI Flash BSC070N10NS5 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET BSC340N08NS3 G | N-Channel Power MOSFET IPB048N15N5 | N-Channel Power MOSFET IPD320N20N3 G | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET BSC100N06LS3 G | N-Channel Power MOSFET S70FL01GSDPMFV010 | Quad SPI Flash S70FL01GSAGMFA013 | Quad SPI Flash BSC070N10NS5 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET BSC340N08NS3 G | N-Channel Power MOSFET 1 2 3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - Gate Driver ICs - 2EDL8123G3C - 2EDL8123G3C - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - 2EDL8123G3C
2EDL8123G3C
Power - Gate Driver ICs - 2EDL8123G3C 2EDL8123G3C
120 V high side and low side 2EDL8123G3C EiceDRIVER™ 2EDL8123G3C is a high-side and low-side driver designed for advanced switching converters such as in telecom and datacom applications. 2EDL8123G3C takes in differential input with built-in hysteresis for enhanced noise immunity. 2EDL8123G3C’s inherent shoot-through protection ensures the robustness of the system. 2EDL8123G3C have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching <6 ns that ensures volt-second balance and avoids magnetic core saturation. The driver comes in small 3x3 industry-standard leadless package and pin-out. Summary of Features Differential input for superb robustness with inherent shoot-through protection 3 A source current capability for both high side and low side drivers Strong 5 A high side / 6 A low side sink current capability On chip boot strap diode Fast switching frequency Low dead-time losses -8 V/+15 V common mode rejection Small 3 mm x 3 mm SON package Lead free RoHS compliant package Benefits High power density High efficiency Strong MOSFET reliability High efficiency Strong MOSFET reliability Robust operation Potential Applications DC-to-DC converter Isolated bus converter Synchronous rectification for SMPS Class-D audio amplifiers Applications Connected and smart lighting for IoT Home appliances Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with BSC026N08NS5 | N-Channel Power MOSFET BSC100N06LS3 G | N-Channel Power MOSFET S70FL01GSDPMFV010 | Quad SPI Flash S70FL01GSAGMFA013 | Quad SPI Flash BSC070N10NS5 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET BSC340N08NS3 G | N-Channel Power MOSFET IPB048N15N5 | N-Channel Power MOSFET IPD320N20N3 G | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET BSC100N06LS3 G | N-Channel Power MOSFET S70FL01GSDPMFV010 | Quad SPI Flash S70FL01GSAGMFA013 | Quad SPI Flash BSC070N10NS5 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET BSC340N08NS3 G | N-Channel Power MOSFET 1 2 3

120 V high side and low side 2EDL8123G3C EiceDRIVER™

2EDL8123G3C is a high-side and low-side driver designed for advanced switching converters such as in telecom and datacom applications. 2EDL8123G3C takes in differential input with built-in hysteresis for enhanced noise immunity. 2EDL8123G3C’s inherent shoot-through protection ensures the robustness of the system. 2EDL8123G3C have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching <6 ns that ensures volt-second balance and avoids magnetic core saturation. The driver comes in small 3x3 industry-standard leadless package and pin-out.


Summary of Features

  • Differential input for superb robustness with inherent shoot-through protection
  • 3 A source current capability for both high side and low side drivers
  • Strong 5 A high side / 6 A low side sink current capability
  • On chip boot strap diode
  • Fast switching frequency
  • Low dead-time losses
  • -8 V/+15 V common mode rejection
  • Small 3 mm x 3 mm SON package
  • Lead free RoHS compliant package

Benefits

  • High power density
  • High efficiency
  • Strong MOSFET reliability
  • High efficiency
  • Strong MOSFET reliability
  • Robust operation

Potential Applications

  • DC-to-DC converter
  • Isolated bus converter
  • Synchronous rectification for SMPS
  • Class-D audio amplifiers

Applications

  • Connected and smart lighting for IoT
  • Home appliances
  • Light electric vehicles (LEV)
  • Telecommunication infrastructure

Designers who used this product also designed with


  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • BSC100N06LS3 G |
    N-Channel Power MOSFET
  • S70FL01GSDPMFV010 |
    Quad SPI Flash
  • S70FL01GSAGMFA013 |
    Quad SPI Flash
  • BSC070N10NS5 |
    N-Channel Power MOSFET
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • BSC340N08NS3 G |
    N-Channel Power MOSFET
  • IPB048N15N5 |
    N-Channel Power MOSFET
  • IPD320N20N3 G |
    N-Channel Power MOSFET
  • BSC028N06NS |
    N-Channel Power MOSFET
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • BSC100N06LS3 G |
    N-Channel Power MOSFET
  • S70FL01GSDPMFV010 |
    Quad SPI Flash
  • S70FL01GSAGMFA013 |
    Quad SPI Flash
  • BSC070N10NS5 |
    N-Channel Power MOSFET
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • BSC340N08NS3 G |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDL8123G3C
Product Name Power - Gate Driver ICs - 2EDL8123G3C
Driver Type High-side; Low-side
Output Current 3 amps
Supply Voltage 8 to 17 volts
Propagation Delay 45 ns
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