Huayi Microelectronics Co., Ltd. Transistors HYG016N04LS1B

Description
40V 240A 1.4mΩ@10V,40A 200W 1.9V@250uA 1 N-Channel TO-263 MOSFETs ROHS
Request a Quote
Description
40V 240A 1.4mΩ@10V,40A 200W 1.9V@250uA 1 N-Channel TO-263 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors HYG016N04LS1B
40V 240A 1.4mΩ@10V,40A 200W 1.9V@250uA 1 N-Channel TO-263 MOSFETs ROHS

40V 240A 1.4mΩ@10V,40A 200W 1.9V@250uA 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG016N04LS1B
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

45 V, 500 mA PNP general-purpose transistors - BC807K-25VL - Nexperia B.V.
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT23; SOT23
View Details
4 suppliers
1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
 - LM5051MAE/NOPB - Rochester Electronics
Texas Instruments
Specs
Transistor Type MOSFET
Package Type SOIC8
View Details
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor - QPD1025L - Qorvo
Specs
Transistor Technology / Material 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
Package Type NI-1230 (Eared)
Transistor Grade / Operating Range Military
View Details
2 suppliers