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Fuji Electric Corp. of America TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3528-01R 2SK3528-01R

Description
Manufacturer: Fuji Electric Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1017476-2SK3528-01R Length: 15.494 mm Capacitance: -3 pF Power Dissipation: 160 W Height: 21.4884 mm Resistance: 370 mΩ Number of Pins: 3 Width: 5.5118 mm Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): STP9NK90Z; STP8NK100Z; STW10NK80Z; FQA9N50; FQP7N65C; FQA14N30; Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 26 ns Drain to Source Breakdown Voltage: 600 V Turn-Off Delay Time: 78 ns Drain to Source Resistance: 370 mΩ Gate to Source Voltage (Vgs): 30 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3528-01R - 1017476-2SK3528-01R - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3528-01R
1017476-2SK3528-01R
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3528-01R 1017476-2SK3528-01R
Manufacturer: Fuji Electric Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1017476-2SK3528-01R Length: 15.494 mm Capacitance: -3 pF Power Dissipation: 160 W Height: 21.4884 mm Resistance: 370 mΩ Number of Pins: 3 Width: 5.5118 mm Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): STP9NK90Z; STP8NK100Z; STW10NK80Z; FQA9N50; FQP7N65C; FQA14N30; Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 26 ns Drain to Source Breakdown Voltage: 600 V Turn-Off Delay Time: 78 ns Drain to Source Resistance: 370 mΩ Gate to Source Voltage (Vgs): 30 V

Manufacturer: Fuji Electric
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1017476-2SK3528-01R
Length: 15.494 mm
Capacitance: -3 pF
Power Dissipation: 160 W
Height: 21.4884 mm
Resistance: 370 mΩ
Number of Pins: 3
Width: 5.5118 mm
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): STP9NK90Z; STP8NK100Z; STW10NK80Z; FQA9N50; FQP7N65C; FQA14N30;
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Turn-On Delay Time: 26 ns
Drain to Source Breakdown Voltage: 600 V
Turn-Off Delay Time: 78 ns
Drain to Source Resistance: 370 mΩ
Gate to Source Voltage (Vgs): 30 V

Supplier's Site
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-3PF;PD 160W;VGS +/-30V
70212493
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-3PF;PD 160W;VGS +/-30V 70212493
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low On-Resistance`

Features:

  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
Supplier's Site

Technical Specifications

  Win Source Electronics Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1017476-2SK3528-01R 70212493
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3528-01R MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-3PF;PD 160W;VGS +/-30V
V(BR)DSS 600 volts 600 volts
rDS(on) 0.3700 ohms 0.2900 ohms
PD 160000 milliwatts 160000 milliwatts
TJ -55 C (-67 F)
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