Huashuo Semiconductor Transistors HSH3018B

Description
30V 205A 2mΩ@10V,30A 287W 2.5V@250uA 1 N-Channel TO-263 MOSFETs ROHS
Request a Quote
Description
30V 205A 2mΩ@10V,30A 287W 2.5V@250uA 1 N-Channel TO-263 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - HSH3018B - ODG (Origin Data Global)
Shenzhen, China
Transistors
HSH3018B
Transistors HSH3018B
30V 205A 2mΩ@10V,30A 287W 2.5V@250uA 1 N-Channel TO-263 MOSFETs ROHS

30V 205A 2mΩ@10V,30A 287W 2.5V@250uA 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HSH3018B
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor - QPD1008 - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-360
Transistor Grade / Operating Range Military
View Details
2 suppliers
DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY - ALD111933PAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP8
View Details
3 suppliers
Infineon Technologies AG
Specs
Transistor Type MOSFET
View Details