Huashuo Semiconductor Transistors HSBA6016

Description
60V 52A 62.5W 12mΩ@10V,30A 2.5V@250uA 1 N-Channel TDSON-8(6x5) MOSFETs ROHS
  • Transistors - HSBA6016 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
60V 52A 62.5W 12mΩ@10V,30A 2.5V@250uA 1 N-Channel TDSON-8(6x5) MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - HSBA6016 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HSBA6016
Transistors HSBA6016
60V 52A 62.5W 12mΩ@10V,30A 2.5V@250uA 1 N-Channel TDSON-8(6x5) MOSFETs ROHS

60V 52A 62.5W 12mΩ@10V,30A 2.5V@250uA 1 N-Channel TDSON-8(6x5) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HSBA6016
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Qorvo
RF JFET Transistors
TGF2957
Specs
Transistor Type JFET
View Details
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR - ALD212904PAL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR
ALD212904PAL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP8
View Details
4 suppliers
Transistor - 4775119 - Radwell International
Fuji Electric Corp. of America
Transistor
2DI150Z-100-E
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE - 855021-2SA1208S-AE - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE
2SA1208S-AE
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details