Infineon Technologies AG 2EDN8523GXTMA1

Description
Gate Driver N-Channel MOSFET 2 Driver
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Description
Gate Driver N-Channel MOSFET 2 Driver
Request a Quote
Datasheet
Datasheet Summary
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The 2EDN852x is a dual-channel gate driver designed to drive MOSFETs, GaN power devices, and IGBTs in high-efficiency SMPS and motor control applications. It features two independent 5A output channels with true rail-to-rail drive capability, 5ns fast slew rates, and 17ns propagation delay precision. The device includes 4.2V and 8V UVLO options for safty, and -10V robustness on control inputs to withstand parasitic ground inductances. Channel-to-channel propagation delay matching is typ. 1ns, enabling parallel operation. It is available in industry-standard DSO 8-pin, TSSOP 8-pin, and WSON 8-pin packages. Reverse current robustness eliminates the need for external output protection diodes.

Datasheet Summary
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The 2EDN852x is a dual-channel gate driver designed to drive MOSFETs, GaN power devices, and IGBTs in high-efficiency SMPS and motor control applications. It features two independent 5A output channels with true rail-to-rail drive capability, 5ns fast slew rates, and 17ns propagation delay precision. The device includes 4.2V and 8V UVLO options for safty, and -10V robustness on control inputs to withstand parasitic ground inductances. Channel-to-channel propagation delay matching is typ. 1ns, enabling parallel operation. It is available in industry-standard DSO 8-pin, TSSOP 8-pin, and WSON 8-pin packages. Reverse current robustness eliminates the need for external output protection diodes.

Suppliers

Company
Product
Description
Supplier Links
 - 2EDN8523GXTMA1 - Rochester Electronics
Newburyport, MA, United States
Gate Driver N-Channel MOSFET 2 Driver

Gate Driver N-Channel MOSFET 2 Driver

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2EDN8523GXTMA1
Polarity N-Channel
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