Fuji Electric Corp. of America MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 5.7Milliohms;ID +/-100A;TO-3PF;PD 125W;VF 1 2SK2907-01R

Description
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low On-Resistance`
Description
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low On-Resistance`

Suppliers

Company
Product
Description
Supplier Links
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 5.7Milliohms;ID +/-100A;TO-3PF;PD 125W;VF 1
70212474
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 5.7Milliohms;ID +/-100A;TO-3PF;PD 125W;VF 1 70212474
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low On-Resistance`

Features:

  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
Supplier's Site

Technical Specifications

  Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 70212474
Product Name MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 5.7Milliohms;ID +/-100A;TO-3PF;PD 125W;VF 1
Polarity N-Channel
V(BR)DSS 60 volts
Transconductance 0.0550 kS
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