Hitachi High Technologies America, Inc. Silicon Drift X-ray Detector (SDD) Vortex®-60EX

Description
Vortex®-60EX silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex®-60EX detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn Kα is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate. Extended probe (60 mm) Available in 30, 40, 50, 65, 70, 80 mm2 Available in thickness of 0.5 and 1 mm
Description
Vortex®-60EX silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex®-60EX detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn Kα is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate. Extended probe (60 mm) Available in 30, 40, 50, 65, 70, 80 mm2 Available in thickness of 0.5 and 1 mm

Suppliers

Company
Product
Description
Supplier Links
Silicon Drift X-ray Detector (SDD) - Vortex®-60EX - Hitachi High Technologies America, Inc.
Schaumburg, IL, USA
Silicon Drift X-ray Detector (SDD)
Vortex®-60EX
Silicon Drift X-ray Detector (SDD) Vortex®-60EX
Vortex®-60EX silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex®-60EX detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn Kα is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate. Extended probe (60 mm) Available in 30, 40, 50, 65, 70, 80 mm2 Available in thickness of 0.5 and 1 mm

Vortex®-60EX silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex®-60EX detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn Kα is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate.

  • Extended probe (60 mm)
  • Available in 30, 40, 50, 65, 70, 80 mm2
  • Available in thickness of 0.5 and 1 mm
Supplier's Site

Technical Specifications

  Hitachi High Technologies America, Inc.
Product Category Radiation Detectors
Product Number Vortex®-60EX
Product Name Silicon Drift X-ray Detector (SDD)
Detector Style Fixed Installation
Unlock Full Specs
to access all available technical data

Similar Products

Standard-Performance NED - MYXRHNEDSCJ/XT - Micross Components, Inc.
Specs
Detector Style Detector Sensing Element Only
Detector Output Dose Rate
Operating Temp -67 to 257 F (-55 to 125 C)
View Details
Electromagnetic Field Radiation Tester - PCE-EMF 823 - PCE Instruments / PCE Americas Inc.
Specs
Detector Style Portable Detector
Local Interface Digital Front Panel
Display Options Digital Display
View Details
Rad-Xcam -  - Teledyne DALSA
Teledyne DALSA
Specs
Detector Style Fixed Installation
Types of Ionizing Radiation Detected X-Ray
Computer Interface Computer Interface
View Details