N/P Channel: N-CH
Voltage(VDS): 30V
Current(ID): 30A
RDS(on): RD(max)<20mΩ@10V
VTH: VTH1V~2.5V
Package: TO-252
N30V,RD(MAX)<20M@10V
N30V,RD(MAX)<20M@10V
N30V,RD(MAX)<20M@10V
N30V,RD(MAX)<20M@10V
N30V,RD(MAX)<20M@10V
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-G20N03K | 3141-G20N03KCT-ND | G20N03K | |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G20N03K | 10V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs |
| Package Type | SOT3; TO-252 (DPAK) | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
| PD | 33000 milliwatts | 33000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Packing Method | Tape & Reel (TR) |
