Goford Semiconductor Co., Ltd. Single FETs, MOSFETs G20N03D2

N30V,RD(MAX)<24M@10V,RD(MAX)<29M

N30V,RD(MAX)<24M@10V,RD(MAX)<29M

N30V,RD(MAX)<24M@10V,RD(MAX)<29M

Win Source Part Number: 1376861-G20N03D2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 51 pct.
Mfr: Goford Semiconductor
Product Status: Active
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-DFN (2x2)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 30 V
Power Dissipation (Max): 1.5W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

N/P Channel: N-CH
Voltage(VDS): 30V
Current(ID): 9A
RDS(on): RD(max)<24mΩ@10V
VTH: VTH1.3V~2V
Package: DFN6L-2*2

N30V,RD(MAX)<24M@10V,RD(MAX)<29M

N30V,RD(MAX)<24M@10V,RD(MAX)<29M>