N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1024490-BSS138AKAR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250A
Max Gate Charge: 0.51nC @ 4.5V
Max Input Capacitance: 47pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 Ohm @ 100mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
BSS138AKA - 60 V, single N-channel Trench MOSFET TO-236 3-Pin Product overview: BSS138AKAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSS138AKAR can be used for catalog matching and distributor lookup.
N-Channel 60V 200mA (Ta) 300mW (Ta), 1.06W (Tc) Surface Mount TO-236AB
N-Channel 60V 200mA (Ta) 300mW (Ta), 1.06W (Tc) Surface Mount TO-236AB
N-Channel 60V 200mA (Ta) 300mW (Ta), 1.06W (Tc) Surface Mount TO-236AB
MOSFET Transistor, N Channel, 200 mA, 60 V, 2.7 ohm, 10 V, 1.2 V RoHS Compliant: Yes
MOSFET N-CH 60V 200MA TO236AB
MOSFET N-CH 60V 200MA TO236AB
60V 200mA 4.5Ω@100mA,10V 1.5V@250mA null SOT-23 MOSFETs ROHS
| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS138AKAR | 1024490-BSS138AKAR | 278-BSS138AKAR | 1727-1261-1-ND | 12X8244 | BSS138AKAR | BSS138AKAR | BSS138AKAR |
| Product Name | 60 V, single N-channel Trench MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138AKAR | N-Channel 60 V MOSFET Transistor | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 200 Ma, 60 V, 2.7 Ohm, 10 V, 1.2 V Rohs Compliant Nexperia | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | ||||
| IDSS | 200000 milliamps | 200 milliamps | ||||||
| VGS(off) | 20 volts | 1.5 volts | ||||||
| PD | 300 milliwatts | 300 to 1060 milliwatts | 300 milliwatts | 300 milliwatts |
