CSD75208W1015, Dual Common Source 20-V P-Channel NexFET? Power MOSFETs 6-DSBGA -40 to 85
Manufacturer: Texas Instruments
Win Source Part Number: 1030680-CSD75208W101
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual) Common Source
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DSBGA
Maximum Power Dissipation: 750mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.6A
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 2.5nC @ 4.5V
Max Input Capacitance: 410pF @ 10V
Maximum Rds On at Id,Vgs: 68 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
-20V, P ch NexFET MOSFET™, dual Common Source WLP 1.0x1.5, 108mOhm 6-DSBGA -55 to 150 Product overview: CSD75208W1015T from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, -20V, 108mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -20V, 108mOhm, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD75208W1015T can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) Common Source 20V 1.6A 750mW Surface Mount 6-DSBGA (1x1.5)
Mosfet Array 2 P-Channel (Dual) Common Source 20V 1.6A 750mW Surface Mount 6-DSBGA (1x1.5)
Mosfet Array 2 P-Channel (Dual) Common Source 20V 1.6A 750mW Surface Mount 6-DSBGA (1x1.5)
MOSFET 2P-CH 20V 1.6A 6DSBGA
MOSFET, DUAL P-CH, -20V, -1.6A, DSBGA-6; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-1.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.056ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage RoHS Compliant: Yes
MOSFET 20V PCH NexFET Pwr MOSFET
| Texas Instruments | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD75208W1015T | 1030680-CSD75208W1015T | 289-CSD75208W1015T | 296-38340-2-ND | CSD75208W1015T | 29AH3851 | CSD75208W1015T |
| Product Name | CSD75208W1015 CSD75208W1015, Dual Common Source 20-V P-Channel NexFET? Power MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD75208W1015T | Dual -20V 108mOhm MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual P-Ch, -20V, -1.6A, Dsbga-6; Transistor Polarity Texas Instruments | MOSFET |
| Polarity | P-Channel | P-Channel | |||||
| V(BR)DSS | -20 volts | 20 volts | |||||
| rDS(on) | 0.1080 ohms | 0.0560 ohms | |||||
| IDSS | -22000 milliamps | -1600 milliamps | |||||
| QG | 1.9 nC |
