The ALD210804PCL is a quad monolithic precision enhancement mode N-channel EPAD® MOSFET array in a 16-pin plastic DIP package, designed for low-voltage, low-power analog applications requiring matched pairs with sub-threshold operation. It features a precision gate threshold voltage of +0.40V ±0.020V, a maximum drain-source on-resistance of 25Ω at VGS = +5.4V, and operates down to <0.4V with <1nA current. The device offers matched threshold voltage offset of ≤10mV, temperature coefficient of gate threshold voltage of -1.6mV/°C, and output current capability exceeding 50mA. It meets standard ESD sensitivity requirements and is intended for use in nano-power circuits, current mirrors, and precision sensor interfaces.
MOSFET Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Through Hole 16-PDIP
Mosfet Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Through Hole 16-PDIP
MOSFET 4N-CH 10.6V 0.08A 16DIP
MOSFET Quad N-Ch Matched Pr VGS=0.0V
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ALD210804PCL | ALD210804PCL-ND | ALD210804PCL | ALD210804PCL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 70 milliamps |
