MOSFET N-CH 100V 180A TO-263 Product overview: G080N10M from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G080N10M can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 180A TO-263
MOSFET N-CH 100V 180A TO-263
N/P Channel: N-CH
Voltage(VDS): 100V
Current(ID): 180A
RDS(on): RD(max)<7.5mΩ@10V
VTH: VTH1.0V~2.5V
Package: TO-263
MOSFET N-CH 100V 180A TO-263
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-G080N10M | 3141-G080N10MCT-ND | G080N10M | |
| Product Name | 100V 180A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G080N10M | Single FETs, MOSFETs |
| PD | 370000 milliwatts | 370000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Packing Method | Tape & Reel (TR) |
