Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6851 2N6851

The 2N6851 is a hermetically sealed, P-channel HEXFET® power MOSFET in a TO-205AF (TO-39) package, rated for 200V drain-to-source voltage and 4.0A continuous drain current at 25°C. It features repetitive avalanche capability with 2.5 mJ repetitive avalanche energy and a peak diode recovery dv/dt of -5.0 V/ns. The device has a maximum on-resistance of 0.80 Ω at -10V gate bias and operates from -55°C to +150°C junction temperature, with a junction-to-case thermal resistance of 5.0°C/W. It meets MIL-PRF-19500/564 and has an ESD rating of Class 1C per MIL-STD-750, Method 1020.