GaN Systems Inc. MOSFET GS-065-004-1-L

The GS-065-004-1-L is a 650 V enhancement mode gallium nitride power transistor designed for high-efficiency switching in applications such as power adapters, fast battery charging, and industrial power supplies. It is packaged in a 5x6 mm PDFN format with bottom-side cooling for optimized thermal performance. The device has a maximum continuous drain current of 3.5 A at 25°C case temperature and a drain-to-source on-resistance of 500 mΩ at 25°C. It supports gate drive voltages from 0 V to 6 V, with transient tolerance from -20 V to +10 V, and exhibits zero reverse recovery charge. Thermal resistance from junction to case is 4.0 °C/W. The part is RoHS 6 compliant and is rated for an operating junction temperature range of -40 °C to +150 °C.