Dongguan Pingjing Microelectronics Technology Co., Ltd. Transistors 13003TE

Description
430V 1.25W 10@500mA,2V 1.5A NPN TO-252 Bipolar (BJT) ROHS
Description
430V 1.25W 10@500mA,2V 1.5A NPN TO-252 Bipolar (BJT) ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - 13003TE - ODG (Origin Data Global)
Shenzhen, China
Transistors
13003TE
Transistors 13003TE
430V 1.25W 10@500mA,2V 1.5A NPN TO-252 Bipolar (BJT) ROHS

430V 1.25W 10@500mA,2V 1.5A NPN TO-252 Bipolar (BJT) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number 13003TE
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE - 855021-2SA1208S-AE - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
IGBT Module - 444032 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
Single FETs, MOSFETs - 448-AIMDQ75R020M2HXTMA1TR-ND - DigiKey
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type 22-PowerBSOP Module
View Details