Dongguan Pingjing Microelectronics Technology Co., Ltd. Transistors 13003TE

Description
430V 1.25W 10@500mA,2V 1.5A NPN TO-252 Bipolar (BJT) ROHS
Description
430V 1.25W 10@500mA,2V 1.5A NPN TO-252 Bipolar (BJT) ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - 13003TE - ODG (Origin Data Global)
Shenzhen, China
Transistors
13003TE
Transistors 13003TE
430V 1.25W 10@500mA,2V 1.5A NPN TO-252 Bipolar (BJT) ROHS

430V 1.25W 10@500mA,2V 1.5A NPN TO-252 Bipolar (BJT) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number 13003TE
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1220604 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT23; Sot-23
View Details
IGBT - 119969632 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD ENHANCED MODE MATCHED PAIR - ALD310708PCL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type PDIP16
View Details
4 suppliers
45 V, 500 mA NPN general-purpose transistors - BC817-16QBZ - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT8015 SOT8015
View Details
5 suppliers