Qorvo's TGF2955 is a discrete 7.56 mm GaN on SiC HEMT which operates from DC-12 GHz.
The TGF2955 typically provides 46.4 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 69.0 % which makes the TGF2955 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
| Qorvo | |
|---|---|
| Product Category | RF Transistors |
| Product Number | TGF2955 |
| Product Name | DC - 12 GHz, 40 Watt Discrete Power GaN on SiC HEMT |
| Transistor Technology / Material | GaN on SiC |
