Diotec Semiconductor FET, MOSFET Arrays DI3A5C03SQK

DI3A5C03SQK is a dual N+P channel power MOSFET in an SO-8 package, designed for power management, MOSFET/IGBT driving, and Class-D audio amplifier applications. It features a drain-source voltage rating of ±30 V, continuous drain current of ±3.5 A, and a maximum power dissipation of 2.0 W. Both MOSFETs exhibit a drain-source on-state resistance of ≤98 mΩ at 10 V gate drive. The device supports fast switching with low gate charge and a low profile height. It meets AEC-Q101 automotive reliability standards when designated with the -Q suffix, is RoHS compliant, and has a thermal resistance junction-to-ambient of ≤78 K/W when mounted on a 625 mm² copper pad. The part is taped and reeled for automated assembly.