DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - FVN10LP FVN10LP

Manufacturer: Diodes Incorporated
Win Source Part Number: 067564-FVN10LP
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 270mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Input Capacitance: 60pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

MOSFET N-CH 60V 270MA TO92-3 Product overview: FVN10LP from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 270MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 270MA, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FVN10LP can be used for catalog matching and distributor lookup.