DIODES Incorporated Transistor Polarity Diodes Inc. FMMT614TA.

Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:500mA; Power Dissipation Pd:500mW; DC Current Gain hFE:5000hFE; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Product Range:-; MSL:- RoHS Compliant: No
Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:500mA; Power Dissipation Pd:500mW; DC Current Gain hFE:5000hFE; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Product Range:-; MSL:- RoHS Compliant: No

Suppliers

Company
Product
Description
Supplier Links
Transistor Polarity Diodes Inc. - 60AC9678 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Polarity Diodes Inc.
60AC9678
Transistor Polarity Diodes Inc. 60AC9678
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:500mA; Power Dissipation Pd:500mW; DC Current Gain hFE:5000hFE; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Product Range:-; MSL:- RoHS Compliant: No

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:500mA; Power Dissipation Pd:500mW; DC Current Gain hFE:5000hFE; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Product Range:-; MSL:- RoHS Compliant: No

Supplier's Site

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 60AC9678
Product Name Transistor Polarity Diodes Inc.
Transistor Type Transistor Polarity Diodes Inc.
Unlock Full Specs
to access all available technical data

Similar Products

DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-02 - Qorvo
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
4 suppliers
 - 2ED2748S01GXTMA1 - Rochester Electronics
Infineon Technologies AG
Specs
Transistor Type MOSFET
Package Type PG-VSON-1
View Details