DIODES Incorporated Single FETs, MOSFETs DMWSH120H28SM4

The DMWSH120H28SM4 is a 1200V N-channel silicon carbide power MOSFET in a TO247-4 package, designed for high-efficiency power-management applications such as EV DC-DC converters, charging systems, and automotive motor drivers. It has a maximum continuous drain current of 100A at 25°C and a typical on-resistance of 20mΩ at 15V gate-source voltage. The device features a low input capacitance of 3944pF, a gate charge of 173.7nC, and a thermal resistance junction-to-case of 0.35°C/W. It is rated for operation from -55°C to +175°C, has a UL 94V-0 flammability rating, and is RoHS compliant with a lead-free matte tin finish. The package weighs approximately 6.6 grams and uses a molded plastic 'Green' molding compound that is halogen- and antimony-free.