The TGF2929-HM is a 100 W GaN on SiC HEMT RF power transistor operating from DC to 3.5 GHz, designed for high-efficiency amplification in radar, satcom, and communications applications. It is housed in a hermetic package with a metal base and ceramic lid, meeting the NI360 footprint, and is lead-free and RoHS compliant. The device operates at 28 V drain voltage with a typical linear gain of 17.4 dB and drain efficiency of 74.9% at 2 GHz under pulsed conditions. It supports both CW and pulse modes, has a thermal resistance of 1.28 °C/W at 115.2 W CW power dissipation, and exhibits 10:1 VSWR mismatch ruggedness at 3.3 GHz.
RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | TGF2929-HM |
| Product Name | RF JFET Transistors |
| Transistor Type | JFET |
