DIODES Incorporated FET, MOSFET Arrays DMT10H072LDV-7

Dual 100V N-channel enhancement mode MOSFET in PowerDI3333-8 package, designed for high-efficiency power management applications. It features a maximum drain-source voltage of 100V, continuous drain current of 12A at TC=25°C, and on-resistance of 66mΩ at VGS=10V and 114mΩ at VGS=4.5V. The device has a thermal resistance of 57°C/W when mounted on a 1-inch square copper plate, operates from -55°C to +150°C, and meets RoHS 3 and Halogen/Antimony-Free "Green" standards. Moisture sensitivity is Level 1 per J-STD-020, and the package is UL 94V-0 rated.