Fuji Electric Corp. of America Hard To Find - 2SK3590-01 2SK3590-01

Description
Manufacturer: Fuji Electric Win Source Part Number: 1127647-2SK3590-01 Manufacturer Homepage: www.fujielectric.co. jp/eng/fdt/scd Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
  • Hard To Find - 2SK3590-01 - 1127647-2SK3590-01 - Win Source Electronics
    Win Source Electronics
  • MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 31Milliohms;ID +/-57A;TO-220AB;PD 270W - 70212477 - Allied Electronics, Inc.
    Allied Electronics, Inc.
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Description
Manufacturer: Fuji Electric Win Source Part Number: 1127647-2SK3590-01 Manufacturer Homepage: www.fujielectric.co. jp/eng/fdt/scd Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
Request a Quote

Suppliers

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Hard To Find - 2SK3590-01 - 1127647-2SK3590-01 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Hard To Find - 2SK3590-01
1127647-2SK3590-01
Hard To Find - 2SK3590-01 1127647-2SK3590-01
Manufacturer: Fuji Electric Win Source Part Number: 1127647-2SK3590-01 Manufacturer Homepage: www.fujielectric.co. jp/eng/fdt/scd Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Fuji Electric
Win Source Part Number: 1127647-2SK3590-01
Manufacturer Homepage: www.fujielectric.co.jp/eng/fdt/scd
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

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MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 31Milliohms;ID +/-57A;TO-220AB;PD 270W - 70212477 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 31Milliohms;ID +/-57A;TO-220AB;PD 270W
70212477
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 31Milliohms;ID +/-57A;TO-220AB;PD 270W 70212477
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low On-Resistance`

Features:

  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
Supplier's Site

Technical Specifications

  Win Source Electronics Allied Electronics, Inc.
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1127647-2SK3590-01 70212477
Product Name Hard To Find - 2SK3590-01 MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 31Milliohms;ID +/-57A;TO-220AB;PD 270W
Package Type SOT3 TO-220
Polarity N-Channel
V(BR)DSS 150 volts
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