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Infineon Technologies AG Automotive IGBT Discretes AIKB50N65DF5

Description
World-class low-cost power for fast-switching applications in small SMD packages Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC. TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only. Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes Summary of Features TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed 650V break-down voltage, 50A nominal current Co-packed with RAPID-1 fast and soft anti-parallel diode Very fast switching (up to 150kHz) Automotive qualified in accordance to Infineon quality standards Max junction temperature 175 °C Highest efficiency very low conduction losses very low switching losses Very low junction and case temperature SMD D2PAK package for low assembly costs and higher power density Extremely robust . Potential Applications On-Board Charger (mainly in the PFC stage) DC-DC or DC-AC Auxiliary drive (e.g. Motor drive Designers who used this product also designed with 1EBN1001AE | Gate Driver ICs 1EDI3020AS | Gate Driver ICs 1EDI2004AS | Gate Driver ICs 1EDI3023AS | Gate Driver ICs 1EBN1001AE | Gate Driver ICs 1EDI3020AS | Gate Driver ICs 1EDI2004AS | Gate Driver ICs 1EDI3023AS | Gate Driver ICs 1EBN1001AE | Gate Driver ICs 1EDI3020AS | Gate Driver ICs 1EDI2004AS | Gate Driver ICs 1EDI3023AS | Gate Driver ICs
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Suppliers

Company
Product
Description
Supplier Links
Automotive IGBT Discretes - AIKB50N65DF5 - Infineon Technologies AG
Neubiberg, Germany
Automotive IGBT Discretes
AIKB50N65DF5
Automotive IGBT Discretes AIKB50N65DF5
World-class low-cost power for fast-switching applications in small SMD packages Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC. TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only. Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes Summary of Features TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed 650V break-down voltage, 50A nominal current Co-packed with RAPID-1 fast and soft anti-parallel diode Very fast switching (up to 150kHz) Automotive qualified in accordance to Infineon quality standards Max junction temperature 175 °C Highest efficiency very low conduction losses very low switching losses Very low junction and case temperature SMD D2PAK package for low assembly costs and higher power density Extremely robust . Potential Applications On-Board Charger (mainly in the PFC stage) DC-DC or DC-AC Auxiliary drive (e.g. Motor drive Designers who used this product also designed with 1EBN1001AE | Gate Driver ICs 1EDI3020AS | Gate Driver ICs 1EDI2004AS | Gate Driver ICs 1EDI3023AS | Gate Driver ICs 1EBN1001AE | Gate Driver ICs 1EDI3020AS | Gate Driver ICs 1EDI2004AS | Gate Driver ICs 1EDI3023AS | Gate Driver ICs 1EBN1001AE | Gate Driver ICs 1EDI3020AS | Gate Driver ICs 1EDI2004AS | Gate Driver ICs 1EDI3023AS | Gate Driver ICs

World-class low-cost power for fast-switching applications in small SMD packages

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.

TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only.

Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes


Summary of Features

  • TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed
  • 650V break-down voltage, 50A nominal current
  • Co-packed with RAPID-1 fast and soft anti-parallel diode
  • Very fast switching (up to 150kHz)
  • Automotive qualified in accordance to Infineon quality standards
  • Max junction temperature 175 °C
  • Highest efficiency
    • very low conduction losses
    • very low switching losses
  • Very low junction and case temperature
  • SMD D2PAK package for low assembly costs and higher power density
  • Extremely robust

.


Potential Applications

  • On-Board Charger (mainly in the PFC stage)
  • DC-DC or DC-AC
  • Auxiliary drive (e.g. Motor drive

Designers who used this product also designed with


  • 1EBN1001AE |
    Gate Driver ICs
  • 1EDI3020AS |
    Gate Driver ICs
  • 1EDI2004AS |
    Gate Driver ICs
  • 1EDI3023AS |
    Gate Driver ICs
  • 1EBN1001AE |
    Gate Driver ICs
  • 1EDI3020AS |
    Gate Driver ICs
  • 1EDI2004AS |
    Gate Driver ICs
  • 1EDI3023AS |
    Gate Driver ICs
  • 1EBN1001AE |
    Gate Driver ICs
  • 1EDI3020AS |
    Gate Driver ICs
  • 1EDI2004AS |
    Gate Driver ICs
  • 1EDI3023AS |
    Gate Driver ICs
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number AIKB50N65DF5
Product Name Automotive IGBT Discretes
VCE(on) 650 volts
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