DIODES Incorporated Single FETs, MOSFETs DMT10H015LPSW-13

DMT10H015LPSW-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI5060-8 package with a maximum profile of 1.10mm, designed for efficient power management and DC-DC conversion. It has a drain-source on-resistance of 16mΩ at 10V gate-source voltage and 18mΩ at 6V, with a continuous drain current of 44A at 25°C case temperature. The device meets AEC-Q100/101/104/200 qualifications, is RoHS compliant, and features a thermal resistance from junction to case of 2.7°C/W. It operates from -55°C to +150°C and is designed for high-reliability automotive applications.