DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2013UFDE-7 DMN2013UFDE-7

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033718-DMN2013UFDE- 7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 660mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2020-6 (Type E) Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10.5A (Ta) Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 25.8nC @ 8V Max Input Capacitance: 2453pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 11 mOhm @ 8.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2013UFDE-7 - 1033718-DMN2013UFDE-7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DMN2013UFDE-7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - DMN2013UFDE-7DITR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2013UFDE-7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 20V, 10.5A, U-Dfn2020 Rohs Compliant Diodes Inc. - 36AJ3578 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1033718-DMN2013UFDE- 7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 660mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2020-6 (Type E) Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10.5A (Ta) Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 25.8nC @ 8V Max Input Capacitance: 2453pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 11 mOhm @ 8.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2013UFDE-7 - 1033718-DMN2013UFDE-7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2013UFDE-7
1033718-DMN2013UFDE-7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2013UFDE-7 1033718-DMN2013UFDE-7
Manufacturer: Diodes Incorporated Win Source Part Number: 1033718-DMN2013UFDE- 7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 660mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: U-DFN2020-6 (Type E) Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10.5A (Ta) Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 25.8nC @ 8V Max Input Capacitance: 2453pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 11 mOhm @ 8.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1033718-DMN2013UFDE-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 660mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type E)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10.5A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 25.8nC @ 8V
Max Input Capacitance: 2453pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 11 mOhm @ 8.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - DMN2013UFDE-7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DMN2013UFDE-7
Single FETs, MOSFETs DMN2013UFDE-7
MOSFET N-CH 20V 10.5A 6UDFN

MOSFET N-CH 20V 10.5A 6UDFN

Supplier's Site Datasheet
Single FETs, MOSFETs - DMN2013UFDE-7DITR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DMN2013UFDE-7DITR-ND
Single FETs, MOSFETs DMN2013UFDE-7DITR-ND
N-Channel 20V 10.5A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)

N-Channel 20V 10.5A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DMN2013UFDE-7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DMN2013UFDE-7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DMN2013UFDE-7
MOSFET N-CH 20V 10.5A 6UDFN

MOSFET N-CH 20V 10.5A 6UDFN

Supplier's Site
Mosfet, N-Ch, 20V, 10.5A, U-Dfn2020 Rohs Compliant Diodes Inc. - 36AJ3578 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 10.5A, U-Dfn2020 Rohs Compliant Diodes Inc.
36AJ3578
Mosfet, N-Ch, 20V, 10.5A, U-Dfn2020 Rohs Compliant Diodes Inc. 36AJ3578
MOSFET, N-CH, 20V, 10.5A, U-DFN2020 ROHS COMPLIANT: YES

MOSFET, N-CH, 20V, 10.5A, U-DFN2020 ROHS COMPLIANT: YES

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DMN2013UFDE-7
MOSFET DMN2013UFDE-7
MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K

MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033718-DMN2013UFDE-7 DMN2013UFDE-7 DMN2013UFDE-7DITR-ND DMN2013UFDE-7 36AJ3578 DMN2013UFDE-7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2013UFDE-7 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 20V, 10.5A, U-Dfn2020 Rohs Compliant Diodes Inc. MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 660 milliwatts 660 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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