MOSFET N-CH 20V 10.5A 6UDFN
Manufacturer: Diodes Incorporated
Win Source Part Number: 1033718-DMN2013UFDE-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 660mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: U-DFN2020-6 (Type E)
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10.5A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 25.8nC @ 8V
Max Input Capacitance: 2453pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 11 mOhm @ 8.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
N-Channel 20V 10.5A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E)
MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
MOSFET, N-CH, 20V, 10.5A, U-DFN2020 ROHS COMPLIANT: YES
MOSFET N-CH 20V 10.5A 6UDFN
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMN2013UFDE-7 | 1033718-DMN2013UFDE-7 | DMN2013UFDE-7DITR-ND | DMN2013UFDE-7 | 36AJ3578 | DMN2013UFDE-7 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DMN2013UFDE-7 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 20V, 10.5A, U-Dfn2020 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 10500 milliamps |
