E4MS015075J2-TR is an automotive-qualified silicon carbide power MOSFET in a TO-263-7XL package, rated for 750 V drain-source voltage and continuous drain current of 95 A at 100 °C case temperature. It features a low on-state resistance of 22 mΩ at 175 °C junction temperature, a soft body diode with low VDS overshoot, and is optimized for high-efficiency switching in onboard chargers and high-voltage DC/DC converters. The device meets AEC-Q101 qualification standards and is RoHS compliant.
Datasheet Summary Powered by GS/AI
E4MS015075J2-TR is an automotive-qualified silicon carbide power MOSFET in a TO-263-7XL package, rated for 750 V drain-source voltage and continuous drain current of 95 A at 100 °C case temperature. It features a low on-state resistance of 22 mΩ at 175 °C junction temperature, a soft body diode with low VDS overshoot, and is optimized for high-efficiency switching in onboard chargers and high-voltage DC/DC converters. The device meets AEC-Q101 qualification standards and is RoHS compliant.
