Wolfspeed Single FETs, MOSFETs E4MS008075J2-TR

The E4MS008075J2 is an automotive qualified silicon carbide power MOSFET in a TO-263-7 XL package, rated for 750 V drain-source voltage and continuous drain current up to 166 A at 100 °C case temperature. It features a typical on-state resistance of 9.6 mΩ at 15 V gate voltage and 175 °C junction temperature, with a thermal resistance from junction to case of 0.16 to 0.23 °C/W. The device operates with a recommended gate drive voltage of +15 V to +18 V for turn-on and -4 V to 0 V for turn-off, and meets AEC-Q101 qualification and RoHS compliance standards. Capacitance ratio Ciss/Crss is 430, supporting partial turn-on immunity, and switching energies are optimized for high efficiency in applications such as onboard chargers, high voltage DC/DC converters, and battery management systems.