P-Channel NexFET Power MOSFET 8-VSONP -55 to 125
MOSFET P-CH 20V 76A 8VSON
P-Channel 20V 76A (Tc) 2.8W (Ta), 69W (Tc) Surface Mount 8-VSONP (3x3.15)
P-Channel 20V 76A (Tc) 2.8W (Ta), 69W (Tc) Surface Mount 8-VSONP (3x3.15)
P-Channel 20V 76A (Tc) 2.8W (Ta), 69W (Tc) Surface Mount 8-VSONP (3x3.15)
Manufacturer: Texas Instruments
Win Source Part Number: 1030674-CSD25402Q3A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.8W (Ta), 69W (Tc)
Family Name: CSD25402Q3A
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (3.3x3.3)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 76A (Tc)
Gate-Source Threshold Voltage: 1.15V @ 250μA
Max Gate Charge: 9.7nC @ 4.5V
Max Input Capacitance: 1790pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 8.9 mOhm @ 10A, 4.5V
Alternative Parts (Cross-Reference): FDMC612PZ; Si7613DN; Si7613DN-T1-GE3;
Introduction Date: December 10, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
MOSFET P-CH 20V 76A 8VSON
MOSFET, P-CH, -20V, -35A, VSON-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0077ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:900mV; Power RoHS Compliant: Yes
MOSFET, P-CH, -20V, -35A, VSON-8; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes
| Texas Instruments | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD25402Q3A | 2088492P | 2088492 | CSD25402Q3A | 296-38916-1-ND | 1030674-CSD25402Q3A | CSD25402Q3A | CSD25402Q3A | 33AH3881 | 71Y7103 |
| Product Name | CSD25402Q3A P-Channel NexFET Power MOSFET | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD25402Q3A | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -20V, -35A, Vson-8; Transistor Polarity Texas Instruments | Mosfet, P-Ch, -20V, -35A, Vson-8; Channel Type Texas Instruments |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||||
| V(BR)DSS | -20 volts | 20 volts | 20 volts | 20 volts | ||||||
| rDS(on) | 0.0089 ohms | 8.90E6 ohms | 0.0077 ohms | |||||||
| IDSS | -82000 milliamps | 76000 milliamps | 76000 milliamps | -35000 milliamps | 35000 milliamps | |||||
| QG | 7.5 nC |
