The E3M0021120U2 is a 1200V, 21mΩ N-channel enhancement mode silicon carbide MOSFET in a Top Side Cooled (TSC) U2 package, designed for automotive applications such as motor control and EV battery chargers. It has a continuous drain current of 84A at 100°C case temperature and a maximum power dissipation of 500W at 25°C case temperature. The device features a thermal resistance from junction to case of 0.23°C/W, a low gate charge of 179nC, and is qualified to AEC-Q101 with PPAP capability. It supports a junction and storage temperature range of -55°C to +175°C and is halogen-free and RoHS compliant.
SiC, MOSFET, 21 mOhm,1200V, TSC (U2) , Automotive
| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | E3M0021120U2-TR |
| Product Name | Silicon Carbide MOSFETs |
| rDS(on) | 0.0210 ohms |
