Nexperia B.V. 40 V, N-channel Trench MOSFET BUK6D23-40EX

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

• Extended temperature range T_j = 175 °C
• Side wettable flanks for optical solder inspection
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Trench MOSFET technology
• AEC-Q101 qualified

Applications

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

N-Channel 40V 8A (Ta), 19A (Tc) 2.3W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

N-Channel 40V 8A (Ta), 19A (Tc) 2.3W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

N-Channel 40V 8A (Ta), 19A (Tc) 2.3W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

MOSFET N-CH 40V 8A/19A 6DFN Product overview: BUK6D23-40EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 8A, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 8A, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK6D23-40EX can be used for catalog matching and distributor lookup.

Win Source Part Number: 1352366-BUK6D23-40EX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 31 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel
Product Status: Active
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020MD-6
Base Product Number: BUK6D23
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V
Power Dissipation (Max): 2.3W (Ta), 15W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99