Wolfspeed 35-W, 9.0 – 10.0-MHz, 28 V, GaN MMIC for Radar Power Amplifiers CMPA901A035F

Description
Cree's CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA901A035F ideal for 9 - 10.0 GHz Radar & CW amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Datasheet
Description
Cree's CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA901A035F ideal for 9 - 10.0 GHz Radar & CW amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Datasheet

Suppliers

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35-W, 9.0 – 10.0-MHz, 28 V, GaN MMIC for Radar Power Amplifiers - CMPA901A035F - Wolfspeed
Durham, NC, United States
35-W, 9.0 – 10.0-MHz, 28 V, GaN MMIC for Radar Power Amplifiers
CMPA901A035F
35-W, 9.0 – 10.0-MHz, 28 V, GaN MMIC for Radar Power Amplifiers CMPA901A035F
Cree's CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA901A035F ideal for 9 - 10.0 GHz Radar & CW amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Cree's CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA901A035F ideal for 9 - 10.0 GHz Radar & CW amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number CMPA901A035F
Product Name 35-W, 9.0 – 10.0-MHz, 28 V, GaN MMIC for Radar Power Amplifiers
Transistor Technology / Material GaN
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