Wolfspeed 180-W, DC - 2 GHz, GaN HEMT CGHV40180

Wolfspeed’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance. FEATURES: Input Matched 180 W (CW) Minimum Pout 250 W Typical Pout 24 dB Typical Small Signal Gain 28 V and 50 V Operation