Wolfspeed 180-W, DC - 2 GHz, GaN HEMT CGHV40180

Description
Wolfspeed’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance. FEATURES: Input Matched 180 W (CW) Minimum Pout 250 W Typical Pout 24 dB Typical Small Signal Gain 28 V and 50 V Operation
  • 180-W, DC - 2 GHz, GaN HEMT - CGHV40180 - Wolfspeed
    Wolfspeed
Datasheet
Description
Wolfspeed’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance. FEATURES: Input Matched 180 W (CW) Minimum Pout 250 W Typical Pout 24 dB Typical Small Signal Gain 28 V and 50 V Operation
Datasheet

Suppliers

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180-W, DC - 2 GHz, GaN HEMT - CGHV40180 - Wolfspeed
Wolfspeed
Durham, NC, United States
180-W, DC - 2 GHz, GaN HEMT
CGHV40180
180-W, DC - 2 GHz, GaN HEMT CGHV40180
Wolfspeed’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance. FEATURES: Input Matched 180 W (CW) Minimum Pout 250 W Typical Pout 24 dB Typical Small Signal Gain 28 V and 50 V Operation

Wolfspeed’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance.

FEATURES:

  • Input Matched
  • 180 W (CW) Minimum Pout
  • 250 W Typical Pout
  • 24 dB Typical Small Signal Gain
  • 28 V and 50 V Operation
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number CGHV40180
Product Name 180-W, DC - 2 GHz, GaN HEMT
Transistor Technology / Material GaN
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