Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
GaN FETs 4-6GHz 5W 32Volt P3dB 38.4 dBm GaN Product overview: TGF3020-SM from Qorvo is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6GHz, 5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6GHz, 5W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TGF3020-SM can be used for catalog matching and distributor lookup.
4-6GHZ,5W,32V,50OHM GAN RF I/P-M
RF MOSFET Transistors 4-6GHz 5W 32Volt P3dB 38.4 dBm GaN
| Qorvo | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors |
| Product Number | TGF3020-SM | 278-TGF3020-SM | 2312-TGF3020-SM-ND | TGF3020-SM |
| Product Name | 4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor | 6GHz 5W MOSFET Transistor | RF FETs, MOSFETs | Transistors |
| Transistor Technology / Material | GaN | |||
| Transistor Grade / Operating Range | Military | |||
| Package Type | QFN | Tray | 16-VFQFN Exposed Pad |
