Wolfspeed Silicon Carbide MOSFET Modules CBB021M12FM3

Description
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost Target Applications DC-DC Converters EV Chargers High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation
  • FET, MOSFET Arrays - 1697-CBB021M12FM3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CBB021M12FM3 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost Target Applications DC-DC Converters EV Chargers High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CBB021M12FM3
Silicon Carbide MOSFET Modules CBB021M12FM3
Features Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation Benefits Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching and Conduction Losses of SiC Reduced Thermal Requirements and System Cost Target Applications DC-DC Converters EV Chargers High-Efficiency Converters / Inverters Renewable Energy Smart-Grid / Grid-Tied Distributed Generation

Features

  • Ultra-Low Loss
  • High Frequency Operation
  • Zero Turn-Off Tail Current from MOSFET
  • Normally-Off, Fail-Safe Device Operation

Benefits

  • Enables Compact, Lightweight Systems
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
  • Reduced Thermal Requirements and System Cost

Target Applications

  • DC-DC Converters
  • EV Chargers
  • High-Efficiency Converters / Inverters
  • Renewable Energy
  • Smart-Grid / Grid-Tied Distributed Generation
Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-CBB021M12FM3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-CBB021M12FM3-ND
FET, MOSFET Arrays 1697-CBB021M12FM3-ND
MOSFET 4N-CH 1200V 105A

MOSFET 4N-CH 1200V 105A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CBB021M12FM3 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CBB021M12FM3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CBB021M12FM3
SIC 4N-CH 1200V 105A MODULE

SIC 4N-CH 1200V 105A MODULE

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number CBB021M12FM3 1697-CBB021M12FM3-ND CBB021M12FM3
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type FM3 Module
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