The C4MV060065T-TR is a 650V N-channel enhancement mode silicon carbide power MOSFET in a Top Side Cooled (TSC) package measuring 15.20 mm x 10.30 mm with a 1.20 mm pitch. It features a drain-source on-state resistance of 60 mΩ at 18 V gate voltage and 25°C, a pulsed drain current of 93 A, and continuous drain current of 26 A at 100°C case temperature. The device supports gate drive voltages of +15 V to +18 V with a transient gate-source voltage limit of +23 V. Thermal resistance from junction to case is 0.75 °C/W, and it operates from -55°C to 175°C junction temperature. The part is halogen-free and RoHS compliant.
60M 650V SIC MOSFET
60M 650V SIC MOSFET
60M 650V SIC MOSFET
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
| DigiKey | Richardson RFPD | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1697-C4MV060065T-TR-ND | C4MV060065T-TR |
| Product Name | Single FETs, MOSFETs | Silicon Carbide MOSFETs |
| rDS(on) | 0.0600 ohms |
