Nexperia B.V. BSH205G2EAR

20 V, P-channel Trench MOSFET in a SOT23 surface-mounted package measuring 2.9 mm x 1.3 mm x 1 mm, with a drain-source on-state resistance of 101 to 124 mΩ at -4.5 V gate-source voltage and 25 °C junction temperature, capable of continuous drain current up to -2.5 A, featuring ESD protection exceeding 1 kV HBM and qualified to AEC-Q101 for automotive applications.