The C3M0120100J is a 1000 V silicon carbide power MOSFET in a TO-263-7 package, designed for high-efficiency switching applications such as EV battery chargers and DC/DC converters. It features a maximum continuous drain current of 14 A at 100°C case temperature, a drain-source on-state resistance of 120 mΩ at 25°C, and an output capacitance of 48 pF. The device has a thermal resistance from junction to case of 1.5 °C/W and operates with a junction temperature range of -55°C to +150°C. It is RoHS compliant and has a 7 mm creepage distance between drain and source. The package includes a separate driver source pin for reduced parasitic inductance.
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster.
Features
MOSFET N-Ch 1000V 22A C3M SiC TO-263-7
MOSFET N-Ch 1000V 22A C3M SiC TO-263-7
MOSFET N-Ch 1000V 22A C3M SiC TO-263-7
N-Channel 1000V 22A (Tc) 83W (Tc) Surface Mount D2PAK-7
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
Features
Benefits
Applications
SICFET N-CH 1000V 22A D2PAK-7
MOSFET 1000V 120mOhm G3 SiC MOSFET TO-263-7
| Wolfspeed | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0120100J | 1503965 | 1503965P | C3M0120100J-ND | C3M0120100J | C3M0120100J | C3M0120100J |
| Product Name | Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode | MOSFETs | MOSFETs | Single FETs, MOSFETs | Silicon Carbide MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Transistor Technology / Material | Silicon Carbide Power MOSFET C3M TM Planar MOSFET Technology N-Channel Enhancement Mode | Silicon Carbide | |||||
| Package Type | TO-263-7 | TO-263; To-263 | TO-263; TO-263 | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263-7 | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | |
| Polarity | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement |
