Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.
Features
Download our LTspice Models or try our SpeedFit design simulator
SICFET N-CH 1200V 30A D2PAK-7 Product overview: C3M0075120J from Wolfspeed is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-C3M0075120J can be used for catalog matching and distributor lookup.
MOSFET SIC MOSFET 1200V 75 mOhm TO-263-7
MOSFET SIC MOSFET 1200V 75 mOhm TO-263-7
SICFET N-CH 1200V 30A D2PAK-7
Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1325249-C3M0075120J
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 50
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 113.6W (Tc)
Supplier Device Package: D2PAK-7
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
Vgs (Max): +19V, -8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 82
MSL Level: 3 (168 Hours)
HTSUS: 8541.29.0095
Other Part Number: -3312-C3M0075120J,C3
Base Product Number: C3M0075120
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: ROHS3 Compliant
N-Channel 1200V 30A (Tc) 113.6W (Tc) Surface Mount D2PAK-7
SICFET N-CH 1200V 30A D2PAK-7
MOSFET SIC MOSFET 1200V 75 mOhm TO-263-7
MOSFET, N-CH, 1.2KV, 30A, TO-263; MOSFET Module Configuration:Single
| Wolfspeed | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0075120J | 278-C3M0075120J | 1923511 | C3M0075120J | 1325249-C3M0075120J | 1697-C3M0075120J-ND | C3M0075120J | C3M0075120J | 27AC3668 |
| Product Name | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | 1200V 30A MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 1.2Kv, 30A, To-263; Mosfet Module Configuration Wolfspeed |
| Transistor Technology / Material | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode | SiCFET (Silicon Carbide) | Silicon Carbide | ||||||
| Package Type | TO-263-7 | Tube | TO-263; To-263 | TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263; SOT3; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-3; TO-263 | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| V(BR)DSS | 1200 volts | 1200 volts |
