The C3M0016120U2 is a 1200V, 16mΩ silicon carbide N-channel enhancement mode MOSFET in a Top Side Cooled (TSC) U2PAK package measuring 14.12mm x 11.75mm, with a maximum case temperature of 25°C and power dissipation of 607W. It features a separate driver source pin, low input and output capacitances, and a fast intrinsic body diode with reverse recovery charge as low as 1402nC under specified conditions. Operating junction and storage temperatures range from -55°C to +175°C. The device is RoHS compliant and meets JEDEC J-STD-020 solder temperature requirements. Thermal resistance from junction to case is 0.19°C/W typical.
SiC, MOSFET, 16 mOhm,1200V, TSC (U2), Industrial
| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | C3M0016120U2-TR |
| Product Name | Silicon Carbide MOSFETs |
| rDS(on) | 0.0160 ohms |
