Wolfspeed Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode C2M0045170P

Description
Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switching losses by as much as 30%. The newly released products are available at 45mΩ (C2M0045170P) and 80mΩ (C2M0080170P) and are designed for rapidly evolving solar applications requiring 1500V bus capability. Designers can reduce component-count and simplify designs by moving from multi-level topologies to simpler two-level topologies made possible by the improved switching performance and higher blocking capability. The device features low on-resistance combined with a low gate charge, making it ideally suited for solar boost converters, DC-DC applications as well as AC-AC converters. See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Features Minimum of 1700V Vbr across entire operating temperature range Optimized package design with wide creepage/clearance between drain and source for high-voltage capability in high-pollution environments Separate power source pin lowers source inductance and provides lower switching losses Clip-mount design with no center mounting hole provides improved electrical isolation 8mm of creepage/clearance between drain and source Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
  • Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode - C2M0045170P - Wolfspeed
    Wolfspeed
  • Single FETs, MOSFETs - C2M0045170P-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - C2M0045170P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N-Ch, 1.7Kv, 72A, To-247-4; Mosfet Module Configuration Wolfspeed - 61AC7502 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C2M0045170P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switching losses by as much as 30%. The newly released products are available at 45mΩ (C2M0045170P) and 80mΩ (C2M0080170P) and are designed for rapidly evolving solar applications requiring 1500V bus capability. Designers can reduce component-count and simplify designs by moving from multi-level topologies to simpler two-level topologies made possible by the improved switching performance and higher blocking capability. The device features low on-resistance combined with a low gate charge, making it ideally suited for solar boost converters, DC-DC applications as well as AC-AC converters. See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Features Minimum of 1700V Vbr across entire operating temperature range Optimized package design with wide creepage/clearance between drain and source for high-voltage capability in high-pollution environments Separate power source pin lowers source inductance and provides lower switching losses Clip-mount design with no center mounting hole provides improved electrical isolation 8mm of creepage/clearance between drain and source Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive
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Datasheet
Datasheet Summary
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The C2M0045170P is a 1700 V, N-channel enhancement mode silicon carbide power MOSFET in a TO-247-4L Plus package with 8 mm creepage distance between drain and source. It has a maximum continuous drain current of 48 A at 25 °C and an on-resistance of 40 mΩ at 25 °C and 80 mΩ at 150 °C. The device features a separate driver source pin to reduce source inductance and switching losses, with a maximum junction and storage temperature of +150 °C. It is RoHS compliant and designed for applications such as solar inverters, switch mode power supplies, and motor drives.

Datasheet Summary
Powered by GS/AI

The C2M0045170P is a 1700 V, N-channel enhancement mode silicon carbide power MOSFET in a TO-247-4L Plus package with 8 mm creepage distance between drain and source. It has a maximum continuous drain current of 48 A at 25 °C and an on-resistance of 40 mΩ at 25 °C and 80 mΩ at 150 °C. The device features a separate driver source pin to reduce source inductance and switching losses, with a maximum junction and storage temperature of +150 °C. It is RoHS compliant and designed for applications such as solar inverters, switch mode power supplies, and motor drives.

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode - C2M0045170P - Wolfspeed
Wolfspeed
Durham, NC, United States
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode
C2M0045170P
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode C2M0045170P
Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switching losses by as much as 30%. The newly released products are available at 45mΩ (C2M0045170P) and 80mΩ (C2M0080170P) and are designed for rapidly evolving solar applications requiring 1500V bus capability. Designers can reduce component-count and simplify designs by moving from multi-level topologies to simpler two-level topologies made possible by the improved switching performance and higher blocking capability. The device features low on-resistance combined with a low gate charge, making it ideally suited for solar boost converters, DC-DC applications as well as AC-AC converters. See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Features Minimum of 1700V Vbr across entire operating temperature range Optimized package design with wide creepage/clearance between drain and source for high-voltage capability in high-pollution environments Separate power source pin lowers source inductance and provides lower switching losses Clip-mount design with no center mounting hole provides improved electrical isolation 8mm of creepage/clearance between drain and source Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive

Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switching losses by as much as 30%. The newly released products are available at 45mΩ (C2M0045170P) and 80mΩ (C2M0080170P) and are designed for rapidly evolving solar applications requiring 1500V bus capability. Designers can reduce component-count and simplify designs by moving from multi-level topologies to simpler two-level topologies made possible by the improved switching performance and higher blocking capability. The device features low on-resistance combined with a low gate charge, making it ideally suited for solar boost converters, DC-DC applications as well as AC-AC converters. See our complete list of reference designs for examples of popular topologies commonly used with SiC today.

Features

  • Minimum of 1700V Vbr across entire operating temperature range
  • Optimized package design with wide creepage/clearance between drain and source for high-voltage capability in high-pollution environments
  • Separate power source pin lowers source inductance and provides lower switching losses
  • Clip-mount design with no center mounting hole provides improved electrical isolation
  • 8mm of creepage/clearance between drain and source
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Supplier's Site Datasheet
Single FETs, MOSFETs - C2M0045170P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
C2M0045170P-ND
Single FETs, MOSFETs C2M0045170P-ND
N-Channel 1700V 72A (Tc) 520W (Tc) Through Hole TO-247-4L

N-Channel 1700V 72A (Tc) 520W (Tc) Through Hole TO-247-4L

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
C2M0045170P
MOSFET C2M0045170P
MOSFET DMOSFET 1.7kV 45mOHMS 4PLUS

MOSFET DMOSFET 1.7kV 45mOHMS 4PLUS

Buy Now Datasheet
Single FETs, MOSFETs - C2M0045170P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
C2M0045170P
Single FETs, MOSFETs C2M0045170P
SICFET N-CH 1700V 72A TO247-4

SICFET N-CH 1700V 72A TO247-4

Supplier's Site Datasheet
Mosfet, N-Ch, 1.7Kv, 72A, To-247-4; Mosfet Module Configuration Wolfspeed - 61AC7502 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.7Kv, 72A, To-247-4; Mosfet Module Configuration Wolfspeed
61AC7502
Mosfet, N-Ch, 1.7Kv, 72A, To-247-4; Mosfet Module Configuration Wolfspeed 61AC7502
MOSFET, N-CH, 1.7KV, 72A, TO-247-4; MOSFET Module Configuration:Single ; Continuous Drain Current Id:72A; Drain Source Voltage Vds:1.7kV; No. of Pins:4Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes

MOSFET, N-CH, 1.7KV, 72A, TO-247-4; MOSFET Module Configuration:Single; Continuous Drain Current Id:72A; Drain Source Voltage Vds:1.7kV; No. of Pins:4Pins; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - C2M0045170P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
C2M0045170P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs C2M0045170P
SICFET N-CH 1700V 72A TO247-4

SICFET N-CH 1700V 72A TO247-4

Supplier's Site

Technical Specifications

  Wolfspeed DigiKey VAST STOCK CO., LIMITED ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number C2M0045170P C2M0045170P-ND C2M0045170P C2M0045170P 61AC7502 C2M0045170P
Product Name Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode Single FETs, MOSFETs MOSFET Single FETs, MOSFETs Mosfet, N-Ch, 1.7Kv, 72A, To-247-4; Mosfet Module Configuration Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode Silicon Carbide SiCFET (Silicon Carbide)
Package Type TO-247-4 Plus TO-247; TO-247-4 TO-247; TO-247-4 TO-3; TO-247 TO-247; TO-247-4
Polarity N-Channel N-Channel; N-Channel
V(BR)DSS 1700 volts
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